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Proceedings Paper

Controlling of the state of CoSi2 thin film by laser radiation
Author(s): Maris Knite; Arthur Medvids
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Paper Abstract

Formation of thin crystalline layers of CoSi2 deposited by coevaporation of Co + Si mixtures on SiO2/Si substrates has been attained by a Q-switched YAG:Nd and CO2 lasers. Electrical and optical properties of the CoSi2 layers have been studied by simultaneous laser irradiation. It is shown that high quality resistive crystalline CoSi2 films can be obtained by treatment with CO2 laser radiation of 2 MW/cm2 to 8 MW/cm2 intensity. Besides, resistance of the layer decreases by a factor of 9. When such a layer is subjected to Q-switched YAG:Nd laser radiation 20 MW/cm2 - 35 MW/cm2 intensity, the magnitude of the resistance increases by a factor of 3 due to forming clusters of vacancies in CoSi2. The CoSi2 phase and rise of concentration of vacancies was determined by x-ray diffraction. It is shown that the change in optical parameters of the resistive film subject to laser treatment can be used for both remote sensing of resistivity and quality check.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306262
Show Author Affiliations
Maris Knite, Riga Technical Univ. (Latvia)
Arthur Medvids, Riga Technical Univ. (Latvia)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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