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Proceedings Paper

Oxygen concentration distribution determination in silicon wafers by semiconductor IR laser spectroscopy
Author(s): Sergey D. Darchuk; Fiodor F. Sizov
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Paper Abstract

IR laser spectral analysis was applied for rapid determination of oxygen concentration and its distribution in silicon wafers at room temperature by the method of scanning semiconductor laser spectroscopy. Pb1-xSnxTe injection lasers, the emitting wavelength of which was changed in the region of (lambda) equals 9.1 micrometers by current impulses of different duration and amplitude, were used. The whole square under an absorption curve to determine the absorption coefficient by all the oxygen complexes and then to evoke the oxygen concentration was taken into account. The possibility to reveal even at room temperature by the method applied the oxygen complexes of different configuration was demonstrated.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306260
Show Author Affiliations
Sergey D. Darchuk, Institute of Semiconductor Physics (Ukraine)
Fiodor F. Sizov, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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