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Proceedings Paper

Cd1-xMnxTe/CdyHg1-yTe heterostructures: structure and optical properties
Author(s): Aleksandr I. Vlasenko; Vladimir N. Babentsov; Z. K. Vlasenko; V. V. Kremenitskiy; A. V. Ponedilok; Igor A. Rudyj
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Paper Abstract

A graded gap CdyHg1-yTe layers grown by ISO VPE technique on the Cd1-xMnxTe substrate were comprehensively studied by scanning electron microscope, X ray microanalyzer, IR transmission method. The influence of the initial stage of CdyHg1-yTe layer growth on the defect structure near the geometrical boundary of the substrate was shown. The possible influence of defects on this boundary on the band structure is shown. The possibility of two steps annealing of the photosensitive CdyHg1-yTe layer was demonstrated numerically aiming the decreasing of the residual native donors, namely tellurium untisites concentration.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306259
Show Author Affiliations
Aleksandr I. Vlasenko, Institute of Semiconductor Physics (Ukraine)
Vladimir N. Babentsov, Institute of Semiconductor Physics (Germany)
Z. K. Vlasenko, Institute of Semiconductor Physics (Ukraine)
V. V. Kremenitskiy, Institute of Semiconductor Physics (Ukraine)
A. V. Ponedilok, Institute of Semiconductor Physics (Ukraine)
Igor A. Rudyj, Politechnical Institute (Ukraine)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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