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Proceedings Paper

Optical properties and structure of porous silicon
Author(s): V. S. Stashhuk; V. B. Shevchenko
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Paper Abstract

The structure of porous silicon (PS) layers prepared in different conditions have been studied using the reflection spectroscopy. The HF post-anodization treatment was used to modify the PS structure and properties. It is found that there is a transparent film with a sharp interface above the PS layer on the samples that show an intense photoluminescence. The transparent surface layer thickness as well as the refraction indices of this layer and PS layer below it have been determined. The volume fractions of the oxide and silicon in the surface and lower PS layers have been estimated using the Lorentz-Lorentz and Maxwell-Garnet formulas.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306254
Show Author Affiliations
V. S. Stashhuk, Kiev Univ. (Ukraine)
V. B. Shevchenko, Kiev Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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