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Proceedings Paper

Use of Raman-scattering waves for the optical diagnostics of semiconductor materials for microelectronics
Author(s): Olexander Yu. Semchuk; Leonid G. Grechko; Vladimir M. Ogenko; Vasilii A. Shenderovskii; Vyacheslav M. Semioshko; Vsevolod V. Kobrgytskii
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Paper Abstract

An investigation has been made of the electric field dependencies of the Raman cross-section for the electromagnetic waves scattered on the fluctuations in nonequilibrium semiconductor plasma for some cases of the orientations of external electric field, wave vector of the fluctuation wave, and the wave vector of falling wave. It has been found that in the semiconductor plasma this cross- section depends to a great extent on an external electric field, the carriers scattering mechanisms, and the energy band structure. It is shown that the analysis of the Raman wave scattering and transformation coefficients may be a very good technique for the diagnosis of the semiconductor materials for the microelectronics.

Paper Details

Date Published: 20 April 1998
PDF: 6 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306249
Show Author Affiliations
Olexander Yu. Semchuk, Institute of Surface Chemistry (Ukraine)
Leonid G. Grechko, Institute of Surface Chemistry (Ukraine)
Vladimir M. Ogenko, Institute of Surface Chemistry (Ukraine)
Vasilii A. Shenderovskii, Institute of Physics (Ukraine)
Vyacheslav M. Semioshko, Institute of Nuclear Research (Ukraine)
Vsevolod V. Kobrgytskii, Institute of Organic Chemistry (Russia)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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