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Proceedings Paper

Optical characterization of As40S40Se20 inorganic resist
Author(s): Alexander V. Stronski; Miroslav Vlcek; Peter E. Shepeljavi; Apollinary I. Stetsun
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Paper Abstract

The results of investigations of photostimulated phenomena in As40S40Se20 thin films with the help of optical methods are presented in this paper. Raman spectra, optical constants in the transparency region of as- evaporated, exposed and annealed films were obtained. The As40S40Se20 thin films have shown good etching selectivity in amine based (in particular, nonaqueous solutions based on triethylamine) etching solutions.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306248
Show Author Affiliations
Alexander V. Stronski, Institute of Semiconductor Physics (Ukraine)
Miroslav Vlcek, Univ. of Pardubice (Czech Republic)
Peter E. Shepeljavi, Institute of Semiconductor Physics (Ukraine)
Apollinary I. Stetsun, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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