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Proceedings Paper

Optical study of the influence of oxygen on the synthesis of SiC-buried layer in Cz-Si and Fz-Si
Author(s): V. A. Yukhimchuk; V. P. Melnik; B. N. Romanjuk; V. G. Popov; Nickolai I. Klyui
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Paper Abstract

The peculiarities of ion-beam synthesis of buried SiC layers in silicon wafers have been studied by Raman and infrared spectroscopy. The effect of oxygen and mechanical stresses on SiC layer formation has been also investigated. It was shown that compressive stresses and SiO2 precipitates with the size larger than some critical value stimulate nucleation and formation of buried SiC layer.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306247
Show Author Affiliations
V. A. Yukhimchuk, Institute of Semiconductor Physics (Ukraine)
V. P. Melnik, Institute of Semiconductor Physics (Ukraine)
B. N. Romanjuk, Institute of Semiconductor Physics (Ukraine)
V. G. Popov, Institute of Semiconductor Physics (Ukraine)
Nickolai I. Klyui, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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