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Proceedings Paper

Interface roughness and confined LO phonon modes in (ZnSe)2 (ZnS)11/GaAs(100) superlattices grown by PAVPE
Author(s): V. V. Tishchenko; Y. S. Raptis; Evangelos Anastassakis
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Paper Abstract

Raman scattering spectra have been measured in (ZnSe)2 (ZnS)11 superlattices (SLs) grown by the photo-assisted vapor phase epitaxy technique. Spectral reveal effects from interface disordering. The magnitude of this disorder was estimated from the observed confinement of the B2 symmetry LO phonon modes in different SL areas with unequal thickness for the ZnSe quantum wells, and was found equal to one monolayer. It has been shown that such estimates are more accurate when based on spectra obtained below resonance.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306240
Show Author Affiliations
V. V. Tishchenko, Institute of Physics (Ukraine)
Y. S. Raptis, National Technical Univ. (Greece)
Evangelos Anastassakis, National Technical Univ. (Greece)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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