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Proceedings Paper

Diagnostics of nitrogen-implanted diamond-like carbon films by optical and microhardness measurements
Author(s): Victor V. Artamonov; Nickolai I. Klyui; B. N. Romanyuk; Mikhail Ya. Valakh; O. V. Vasylyk; Victor A. Semenovich; Alejandro Perez-Rodriguez; Juan Ramon Morante
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Paper Abstract

Comparative study of nitrogen implanted a-C:H film has been carried out by micro-Raman and nanoindentation techniques. At high dose nitrogen implantation (1(DOT)1017 cm-2) the structural inhomogeneities are observed in the implanted region. After implantation a significant broadening and energy shift of both G- and D-bands in Raman spectra are observed. On the other hand, film hardness measurements reveal the existence of more dramatic differences between both implanted regions with homogeneous and structural inhomogeneities. The film hardness in the inhomogeneous region more than by 5 times exceed the one in the homogeneous region. The hardness improvement of ion implanted a-C:H film is related to film disordering and ion beam induced phase-structure transformation in the implanted region.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306239
Show Author Affiliations
Victor V. Artamonov, Institute of Semiconductor Physics (Ukraine)
Nickolai I. Klyui, Institute of Semiconductor Physics (Ukraine)
B. N. Romanyuk, Institute of Semiconductor Physics (Ukraine)
Mikhail Ya. Valakh, Institute of Semiconductor Physics (Ukraine)
O. V. Vasylyk, Institute of Semiconductor Physics (Ukraine)
Victor A. Semenovich, Institute for Superhard Materials (Ukraine)
Alejandro Perez-Rodriguez, Univ. de Barcelona (Spain)
Juan Ramon Morante, Univ. de Barcelona (Spain)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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