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Proceedings Paper

Micro-Raman characterization of GaN epilayers
Author(s): Marion Renucci; F. Demangeot; J. Frandon
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Paper Abstract

Raman spectroscopy is used to study the influence of the deposition temperature of GaN buffer layers on the lattice dynamics of epitaxial GaN layers. This growth parameter is shown to play a role in the non intentional n-doping of the layers, as evidenced by plasmon coupling with longitudinal phonons. Lineshape analysis of the L-(0) low- frequency component of the coupled A1 (LO)-plasmon mode, based on a dielectric approach and supported by IR reflectivity measurements, is applied to spatially-resolved micro-Raman measurements, revealing local inhomogeneities in the free-carrier concentration on the scale of microcrystallites. On account of polarization measurements achieved on the sample edge, additional scattering in the spectral range of optical phonons is attributed to charge density fluctuations. Partial screening of q does not equal 0 LO phonons by the free-carriers is invoked to explain polarized scattering located in the range of high density of phonon states.

Paper Details

Date Published: 20 April 1998
PDF: 7 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306235
Show Author Affiliations
Marion Renucci, Univ. Paul Sabatier (France)
F. Demangeot, Univ. Paul Sabatier (France)
J. Frandon, Univ. Paul Sabatier (France)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997

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