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Proceedings Paper

Luminescence of ZnSe(Te) crystals melt-grown from the charge and enriched in selenium
Author(s): Vladimir D. Ryzhikov; Leonid P. Gal'chinetsky; S. N. Galkin; Konstantin A. Katrunov; Elena K. Lisetskaya
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Paper Abstract

The evolution of the radioluminescence (RL) spectra and spectral-kinetic characteristics of ZnSe100-xTex (0.01 <EQ x <EQ 0.96) crystals were studied at 77 K as a function of concentration of metallic Se added to the initial charge. The crystals were grown from the melt under argon pressure. The elemental composition of the samples was checked by x-ray luminescence and chemical analysis. It is shown that, depending upon the degree of doping with Te, different RL bands compete with each other. Thus, at 0.01 <EQ x <EQ 0.20 the short-wave luminescence should be probably treated as a self-activated luminescence band caused by recombination in the complex {V Zn- + D+}, where V is the Zn vacancy, a D-donor. The green-blue luminescence at 0.20 <EQ x <EQ 0.96 can be probably associated with Te clusters, while the formation of the `green' RL band is presumably due to Zn vacancies. The presence of the intense `red' band in ZnSe100-xTex samples, corresponding to the whole range of x, is considered as an indication of the fact that the luminescence center {V Zn- + Te0 + Zn+} comprises the isovalent dopant Te and the excess Zn.

Paper Details

Date Published: 20 April 1998
PDF: 3 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306233
Show Author Affiliations
Vladimir D. Ryzhikov, Institute for Single Crystals (Ukraine)
Leonid P. Gal'chinetsky, Institute for Single Crystals (Ukraine)
S. N. Galkin, Institute for Single Crystals (Ukraine)
Konstantin A. Katrunov, Institute for Single Crystals (Ukraine)
Elena K. Lisetskaya, Institute for Single Crystals (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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