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Proceedings Paper

Optical diagnostics of light-emitting Si clusters in SiO2 formed by ion implantation
Author(s): Mikhail Ya. Valakh; V. A. Yukhimchuk; V. Ya. Bratus'; A. N. Nasarov; Peter L. F. Hemment; T. Komoda
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Paper Abstract

Si/SiO2 structures implanted by Si+ ions are investigated with photoluminescence (PL), electron spin resonance and low frequency Raman scattering (RS) methods. The nature of the PL band at 2.0 eV that appears after implantation is identified. The sizes of Si nanocrystals formed after the implantation and thermal annealing at T equals 1200 degree(s)C are determined by low frequency RS method. It is shown that low temperature plasma treatment of the annealed samples leads to the increase of PL intensity.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306228
Show Author Affiliations
Mikhail Ya. Valakh, Institute of Semiconductor Physics (Ukraine)
V. A. Yukhimchuk, Institute of Semiconductor Physics (Ukraine)
V. Ya. Bratus', Institute of Semiconductor Physics (Ukraine)
A. N. Nasarov, Institute of Semiconductor Physics (Ukraine)
Peter L. F. Hemment, Univ. of Surrey (United Kingdom)
T. Komoda, MEW Ltd. (Japan)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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