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Proceedings Paper

Photoluminescent investigations of SHF irradiation effect on defect states in GaAs:Sn(Te) and InP crystals
Author(s): Irene B. Ermolovich; Evgenie F. Venger; Raisa V. Konakova; Viktor V. Milenin; Sergey V. Svechnikov; Mihail V. Sheveljev
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Paper Abstract

Results of investigations of magnetron and hyrotron irradiations effects on spectra of local states to be formed by intrinsic and impurity point structure defects in nearsurface layers of GaAs:Sn (111), GaAs:Sn (100), GaAs:Te (111) and InP (100) have been studied and discussed. The effect of SHF irradiation on defect states in GaAs and InP has been obtained to depend on both the type of doped impurity and the orientation of sample surface. The important role of intrinsic vacancies in processes of rebuilding point and complex defects in nearsurface layers has been established. The gettering action of SHF- irradiation on point defects and the increase of homogeneity of SHF-irradiated crystals have been found. The mechanisms of SHF-fields and semiconductor compounds interactions are discussed.

Paper Details

Date Published: 20 April 1998
PDF: 8 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306225
Show Author Affiliations
Irene B. Ermolovich, Institute of Semiconductor Physics (Ukraine)
Evgenie F. Venger, Institute of Semiconductor Physics (Ukraine)
Raisa V. Konakova, Institute of Semiconductor Physics (Ukraine)
Viktor V. Milenin, Institute of Semiconductor Physics (Ukraine)
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)
Mihail V. Sheveljev, Institute of Electrowelding (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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