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Proceedings Paper

Luminescence method for the determination of the current injection component in red GaAs1-xPx light-emitting diodes
Author(s): K. D. Glinchuk; G. A. Sukach
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Paper Abstract

A method is proposed to find the current injection component in red GaAs1-xPx light-emitting diodes at high forward voltages V(V > 1.7 volts), when the flowing current i is mainly the ohmic one. The method is based on the simultaneous measurements of the electroluminescence decay time, electroluminescence intensity vs. the flowing current dependences and current-voltage characteristics. It is shown that in red GaAs1-xPx light-emitting diodes the current injection component j approximately i at low V(V < 1.6 volts) and j approximately j1/2 at high V(V > 1.7 volts). The proposed method for the determination of the j equals $qq(i) dependences is suitable also for other light-emitting diodes based on different semiconductor materials.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306222
Show Author Affiliations
K. D. Glinchuk, Institute of Semiconductor Physics (Ukraine)
G. A. Sukach, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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