Share Email Print
cover

Proceedings Paper

Laser radiation action on c-Si with dislocations and their diagnostics
Author(s): Vladimir Arsenovich Makara; L. P. Steblenko; V. A. Pasechny; Volodymyr S. Ovechko; P. T. Petrosian; Andrii M. Dmitruk
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The development of new technique of measurement of optical constants of the surface of solid states is carried out. It is shown that two-beams interference method of refraction index distribution measurement has a lot of advantages to a well-known ellipsometric technique. Optical reconstruction of inhomogeneities picture at the surface of c-Si is shown.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306221
Show Author Affiliations
Vladimir Arsenovich Makara, Kiev Univ. (Ukraine)
L. P. Steblenko, Kiev Univ. (Ukraine)
V. A. Pasechny, Kiev Univ. (Ukraine)
Volodymyr S. Ovechko, Kiev Univ. (Ukraine)
P. T. Petrosian, Kiev Univ. (Ukraine)
Andrii M. Dmitruk, Kiev Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

© SPIE. Terms of Use
Back to Top