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Proceedings Paper

Determination of the concentration of shallow impurities in semi-insulating GaAs by low-temperature (77 K) photoluminescence
Author(s): K. D. Glinchuk; N. M. Litovchenko; Anatoliy V. Prokhorovich; Oksana N. Stril'chuk
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Paper Abstract

The detailed analysis of the low-temperature (77 K) photoluminescence spectra of undoped semi-insulating GaAs crystals containing different concentrations of shallow impurities Zn, C and Si is given. A linear correlation between the reduced intensities of the Zn, C and Si acceptor-induced emission bands and the concentrations of Zn, C and Si atoms is found. As a result the calibration dependences--the ratio of the intensity of the acceptor- induced emission band to the intensity of the near intrinsic emission band as a function of the impurity concentration were obtained. The above tabulated curves could be successfully used for the determination of the concentrations of shallow impurities Zn, C and Si by 77 K photoluminescence spectra measurements in any semi- insulating GaAs crystals.

Paper Details

Date Published: 20 April 1998
PDF: 6 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306220
Show Author Affiliations
K. D. Glinchuk, Institute of Semiconductor Physics (Ukraine)
N. M. Litovchenko, Institute of Semiconductor Physics (Ukraine)
Anatoliy V. Prokhorovich, Institute of Semiconductor Physics (Ukraine)
Oksana N. Stril'chuk, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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