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Proceedings Paper

Light-activated photoluminescence of porous silicon
Author(s): Mykola S. Boltovec; Oleksandr I. Dacenko; Svitlana M. Naumenko; Tetjana V. Ostapchuk; Olga V. Rudenko
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Paper Abstract

Samples of porous silicon (PS) were etched in concentrated hydrofluoric acid. The initial and etched samples were exposed to the air by pairs at room temperature either in the dark or in daylight. In the process of exposition the integrated intensity of photoluminescence (IPL) excited by a nitrogen laser (337 nm) was measured in regular time intervals on all samples. It has been established that when samples are exposed to the light their IPL rises with time, increasing more rapidly in the etched samples than in the nonetched ones. IPL of the etched samples flattened out after several weeks, while that of the nonetched ones-- after several months. IPL of the samples that were in the dark practically did not change with time. It is shown that the rate of IPL rise depends on a degree of ionization of the air where the samples were located. The results obtained confirm the idea that one of the main factors limiting the quantum yield of PS photoluminescence is the nonradiative recombination that results from the presence of dangling bonds which may be saturated by the light-generated air ions.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306217
Show Author Affiliations
Mykola S. Boltovec, Research Institute Orion (Ukraine)
Oleksandr I. Dacenko, Kiev Univ. (Ukraine)
Svitlana M. Naumenko, Kiev Univ. (Ukraine)
Tetjana V. Ostapchuk, Kiev Univ. (Ukraine)
Olga V. Rudenko, Kiev Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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