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Proceedings Paper

Luminescent purity diagnostics of ZnSe crystals
Author(s): Olegh V. Vakulenko; Vladyslav M. Kravchenko; Zinovij Z. Janchuk
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Paper Abstract

The photoluminescence (PL) spectra of undoped ZnSe crystals obtained from the extra pure raw material with the method of vapor transport with the I2 gas as transporter (crystals A), and ZnSe crystals grown from the same raw material with the sublimation method (crystals B), are studied in the region 500 - 1000 nm at T equals 290 and 100 K in an attempt to find the correlation between the growth methods and the PL spectra. The PL was excited with pulsed N2 (337 nm) and continuous wave He-Cd (442 nm) and Ar+ (488 nm) lasers, which made it possible to realize the cases of strong surface, weak surface (band-to-band) and weak bulk (`impurity') excitation, respectively. It is found that in the PL spectra of samples A in the case of band-to-band excitation, except the `red' band at 1.96 eV, a `green' band at 2.3 eV is observed at 100 K, and in the spectra of samples B an IR-band at 1.25 eV is observed (290 K, bulk excitation) which is much more intense than the `red' one and which disappears at 100 K. It is established that the `red' bands with hvm equals 1.96 - 1.98 eV and hvm equals 1.88 eV in crystals A at 290 K, which arise in band-to-band and `impurity' excitation, respectively, have different nature. There is reason to think that the presence of the IR-band in the PL spectra of undoped ZnSe crystals at room temperature and bulk excitation and its vanishing in reducing the temperature, are the evidence for good purity of the material under study.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306216
Show Author Affiliations
Olegh V. Vakulenko, Kiev Univ. (Ukraine)
Vladyslav M. Kravchenko, Kiev Univ. (Ukraine)
Zinovij Z. Janchuk, Kiev Univ. (Ukraine)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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