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Proceedings Paper

Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy
Author(s): Balint Podor; Evgenie F. Venger; Tatyana Georgiyevn Kryshtab; Galina N. Semenova; Petro M. Lytvin; Mikhail P. Semtsiv
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Paper Abstract

The low-temperature photoluminescence and x-ray structural investigations of the properties of InP epilayers grown from indium melt with rare earth element dysprosium (Dy) addition are presented. The Dy addition influence on intensity, linewidth and spectral position of the near-band-gap emission and of vacancy-impurity bands at 0.75 - 1.1 eV is reported. The obtained data of the stoichiometry changes in InP epilayers grown with addition of Dy are considered. Low background doping level with free electron concentration below about 1014 cm-3 at the room temperature for InP epilayers was achieved, that witnessed of the Dy strong gettering effect. It was also ascertained that Dy incorporated into the grown layers in various phases forms (like the inclusions) at lowest using concentration (CLDy approximately 0.01 at.%).

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306213
Show Author Affiliations
Balint Podor, Research Institute for Technical Physics (Hungary)
Evgenie F. Venger, Institute of Semiconductor Physics (Ukraine)
Tatyana Georgiyevn Kryshtab, Institute of Semiconductor Physics (Ukraine)
Galina N. Semenova, Institute of Semiconductor Physics (Ukraine)
Petro M. Lytvin, Institute of Semiconductor Physics (Ukraine)
Mikhail P. Semtsiv, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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