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Proceedings Paper

Role of growth defects on carrier dynamics: semi-insulating GaAs
Author(s): Vygantas Mizeikis; Kestutis Jarasiunas; Jurgis Storasta; V. Gudelis; L. Bastiene; M. Sudzius
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Paper Abstract

Using transient light-induced grating experiments, we demonstrate important consequences of interaction between photoexcited electrons and EL2 centers in semiinsulating GaAs at room temperature. Carrier lifetime is found to depend on the local density and ionization ratio of the EL2 centers. A substantial slow down of diffusive grating decay due to the interaction between electrons and photoionized EL2 donors is observed.

Paper Details

Date Published: 20 April 1998
PDF: 8 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306208
Show Author Affiliations
Vygantas Mizeikis, Vilnius Univ. (Japan)
Kestutis Jarasiunas, Vilnius Univ. (Lithuania)
Jurgis Storasta, Vilnius Univ. (Lithuania)
V. Gudelis, Vilnius Univ. (Lithuania)
L. Bastiene, Vilnius Univ. (Lithuania)
M. Sudzius, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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