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Proceedings Paper

Direct study of nonequilibrium carriers near Fermi level of Au film by optical reflection and transmission in femtosecond scale
Author(s): A. L. Dobryakov; Yurii E. Lozovik; V. M. Farztdinov; S. A. Kovalenko; Gerd Marowsky; Juru A. Matveets; S. P. Merkulova
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Paper Abstract

The new method of investigation of Fermi surface and Fermi liquid behavior by femtosecond laser spectroscopy is considered. The method consists in study of spectral dependence of the nonequilibrium charge carriers relaxation time by pump-supercontinuum probe technique. Photoinduced optical properties and relaxation of nonequilibrium charge carriers in Au film in a femtosecond time scale are analyzed. It is shown that the relaxation rate sharply slows down in the spectral area related to optical transitions into the vicinity of Fermi level. The form of the peak gives an information on damping of the quasiparpicles near Fermi surface and on deviation of thermalization of nonequilibrium electrons from the conventional equilibrium Fermi-liquid behavior. Studying of ultrafast relaxation time of electron response provides the direct method of investigation thermalization of nonequilibrium electrons in real femtosecond time scale and may give the unique information about deviations from conventional Fermi liquid behavior by femtosecond laser spectroscopy.

Paper Details

Date Published: 20 April 1998
PDF: 7 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306206
Show Author Affiliations
A. L. Dobryakov, Institute of Spectroscopy (Germany)
Yurii E. Lozovik, Institute of Spectroscopy (Russia)
V. M. Farztdinov, Institute of Spectroscopy (Russia)
S. A. Kovalenko, Max-Planck-Institut fuer Biophysikalische Chemie (Germany)
Gerd Marowsky, Laser Lab. Goettingen e.V. (Germany)
Juru A. Matveets, Institute of Spectroscopy (Russia)
S. P. Merkulova, Institute of Spectroscopy (Russia)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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