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Proceedings Paper

Nonlinear-carrier-transport-governed nonresonant optical nonlinearity in A3 B5 crystals
Author(s): Kestutis Jarasiunas; Liudvikas Subacius
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Paper Abstract

A brief survey is given of recent investigations on non- linear optical phenomena and nonstationary hot carrier transport in III-V crystals for the case, when photoexcited carriers are non-uniformly heated by strong external microwave or dc electric field. We analyze numerically and experimentally a novel possibility to create very efficient and fast electro-optic refractive index modulation. A transient high-field domain grating develops via hot carrier transport at non-resonant interaction of light with bulk GaAs and InP crystals. Time-resolved carrier and field dynamics in picosecond and nanosecond time domain is studied, varying the external dc or microwave field strength, frequency, grating period, and interference field modulation depth. We present the criteria for high-field domains formation, and compare the strength of free-carrier and electro-optic nonlinearities. Light triggered Gunn- domains grating formation is confirmed experimentally by an enhancement of light self-diffraction efficiency in external microwave field.

Paper Details

Date Published: 20 April 1998
PDF: 14 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306203
Show Author Affiliations
Kestutis Jarasiunas, Vilnius Univ. (Lithuania)
Liudvikas Subacius, Semiconductor Physics Institute (Lithuania)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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