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Proceedings Paper

Optical and photoelectrical studies of strain fields in semiconductor crystals
Author(s): Boris K. Serdega; V. G. Zykov; Galina N. Semenova; L. V. Shekhovtsov
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Paper Abstract

For some semiconductor crystals and structures the intrinsic mechanical stresses due to the nonuniform dopant distribution were investigated. p-Ge crystals with layered nonuniformities, Si wafers and Ge - GaAs heterostructures served as model samples. Using the birefringence signal measurements, a correlation was found between the dopant distribution and the intrinsic deformations stemming from them. The spectral characteristics of the Ge - GaAs heterostructures indicate at the presence of (oppositely oriented) dopant concentration gradients along the interface in Ge film and GaAs substrate. Using a combination of the optical and photoelectrical measurements enhances the possibilities for the interpretation of the experimental results and also provides a basis for developing nondestructive control methods.

Paper Details

Date Published: 20 April 1998
PDF: 6 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306198
Show Author Affiliations
Boris K. Serdega, Institute of Semiconductor Physics (Ukraine)
V. G. Zykov, Institute of Semiconductor Physics (Ukraine)
Galina N. Semenova, Institute of Semiconductor Physics (Ukraine)
L. V. Shekhovtsov, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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