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Proceedings Paper

IR reflection spectra of the ZnO/Al2O3 structure
Author(s): Evgenie F. Venger; A. V. Melnichuk; Y. A. Pasechnik; E. I. Sukhenko
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Paper Abstract

The textured zinc oxide layers on sapphire, prepared by plasma chemical vapor deposition, were investigated with IR reflection spectroscopy in the residual rays region. A computer analysis of variance was used to simulate the reflection spectra of the structure studied and to calculate both charge carrier concentration and mobility in the zinc oxide layers.

Paper Details

Date Published: 20 April 1998
PDF: 5 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306195
Show Author Affiliations
Evgenie F. Venger, Institute of Semiconductor Physics (Ukraine)
A. V. Melnichuk, Institute of Semiconductor Physics (Ukraine)
Y. A. Pasechnik, Dragomanov Pedagogical Univ. (Ukraine)
E. I. Sukhenko, Dragomanov Pedagogical Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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