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Proceedings Paper

Infrared spectroscopy of luminescent porous silicon
Author(s): Vladimir Arsenovich Makara; V. S. Stashhuk; V. B. Shevchenko
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Paper Abstract

The photoluminescence (PL) and infrared (IR) absorption spectra of porous silicon prepared in different conditions have been studied. HF post-anodization treatment was used to modify the porous silicon properties. It is shown that the samples obtained at higher current density show more intense visible PL. It was also found that there is a correlation between the intensity of luminescence peak and that of IR- absorption peaks related to the Si-O-Si and O3-Si-H modes. The obtained results suggest that surface complexes related to oxygen or hydrogen with oxygen are responsible for the intense visible PL in the samples of porous silicon subjected to HF treatment and exposed to the ambient air.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306194
Show Author Affiliations
Vladimir Arsenovich Makara, Kiev Univ. (Ukraine)
V. S. Stashhuk, Kiev Univ. (Ukraine)
V. B. Shevchenko, Kiev Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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