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Proceedings Paper

Optical study on microstructure of laser-deposited Si-containing films
Author(s): Sergey V. Svechnikov; E. B. Kaganovich; E. G. Manoilov; A. A. Kudryavtsev; Ivan Z. Indutnyi
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Paper Abstract

Optical properties of films obtained by reactive pulse laser deposition of monocrystalline Si have been studied. Transmissivity and reflectivity of these films were measured and used for calculation of their optical constants spectra. The dependencies of the spectra on reactive gas composition and pressure during sputtering let to conclude that the films prepared are composite structures containing at least two phases: SiOxNy matrix and nanocrystalline Si- particles embedded in it.

Paper Details

Date Published: 20 April 1998
PDF: 4 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306192
Show Author Affiliations
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)
E. B. Kaganovich, Institute of Semiconductor Physics (Ukraine)
E. G. Manoilov, Institute of Semiconductor Physics (Ukraine)
A. A. Kudryavtsev, Institute of Semiconductor Physics (Ukraine)
Ivan Z. Indutnyi, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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