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Proceedings Paper

Structure and optical parameters of the system with porous silicon: ellipsometric study
Author(s): Volodymyr A. Odarych; Oleksandr I. Dacenko; Mykola S. Boltovec; Olga V. Rudenko; Volodymyr O. Pasichnyj
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Paper Abstract

The principal angle-of-incidence (Phi) and ellipticity tg(rho) of the light reflected from PS surface are measured in the visible on two samples by spectroellipsometry methods. The dependence of the reflected light intensity in the s-plane and ellipsometric parameters on the angle-of-incidence and photoluminescence spectra excited by a pulsed nitrogen laser are recorded as well. An increase of the photoluminescence intensity in storing the sample in the atmosphere and corresponding change of the ellipsometric curves are detected. The obtained evidence indicate the formation of a two-layer structure during electrochemical etching of silicon, the outer layer being transparent and supposedly consisting of silicon compound with nanocrystalline silicon residuals, while the inner one being the layer of porous silicon whose pores are filled with the same compound. Assuming that the compound is silicon dioxide, we have determined the fraction of silicon in the outer layer. The layer refraction index and thickness are determined. It is established that the photoluminescence is more intense in the sample regions with thicker outer layer.

Paper Details

Date Published: 20 April 1998
PDF: 6 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306190
Show Author Affiliations
Volodymyr A. Odarych, Kiev Univ. (Ukraine)
Oleksandr I. Dacenko, Kiev Univ. (Ukraine)
Mykola S. Boltovec, Research Institute Orion (Ukraine)
Olga V. Rudenko, Kiev Univ. (Ukraine)
Volodymyr O. Pasichnyj, Kiev Univ. (Ukraine)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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