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Proceedings Paper

Investigation using MAI ellipsometry of damage by surface metallic doping of near-surface layers in semiconductors
Author(s): Nikolas L. Dmitruk; Lubov A. Zabashta; Oleg I. Zabashta
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Paper Abstract

Flllpsometr is the most preferable method for investigation and characterisation iii faint niicrorelief surtace ss hen other optical methods are not enough sensitive: for example. there is the gentlr sloping surfaces far which so-called Raleigh condjtion is satisfied: 2k5coso 2. k=rt. 2. Here w is the wave length. d is the root-mean-square roughness. Phsicall it means that intuence of the individual roughness is small bitt the total contribution in the optical properties is large. Such type of semiconductor surfaces can he prepared b means of surfaces metallic doping with fallowing removal of metal coating. The electrochernical technology of surface doping (metallization is accompanied surel br dissolution of the semiconductor substrate around the metal islands. Keywords: ellipsometr. multilaer flim. interfactal layer. superlattice. optical properties. theory of the effectise medium

Paper Details

Date Published: 20 April 1998
PDF: 3 pages
Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306189
Show Author Affiliations
Nikolas L. Dmitruk, Institute of Semiconductor Physics (Ukraine)
Lubov A. Zabashta, Sumy State Univ. (Ukraine)
Oleg I. Zabashta, Sumy State Univ. (Ukraine)

Published in SPIE Proceedings Vol. 3359:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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