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Proceedings Paper

Subpicosecond time-resolved Raman studies of nonequilibrium excitations in wide-bandgap GaN
Author(s): Kong-Thon Tsen; Ravindra P. Joshi; David K. Ferry
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Paper Abstract

We have studied non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN by subpicosecond time-resolved Raman spectroscopy. Our experimental result show that for electron densities n greater than or equal to 5 X 1017 cm-3, the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the effective electron temperature much higher than the lattice temperature. In addition, we find that the total electron-longitudinal optical phonon scattering rate in GaN is about one order of magnitude larger than that in GaAs. We attribute this enormous increase in the electron- longitudinal optical phonon scattering rate to the much larger ionicity in GaN.

Paper Details

Date Published: 23 April 1998
PDF: 10 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306168
Show Author Affiliations
Kong-Thon Tsen, Arizona State Univ. (United States)
Ravindra P. Joshi, Old Dominion Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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