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Proceedings Paper

Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure
Author(s): Eric D. Grann; Kong-Thon F. Tsen; David K. Ferry; Arnel A. Salvador; Andrei Botchkarev; Hadis Morkoc
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Paper Abstract

Electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure under the application of an electric field have been studied by time-resoled Raman spectroscopy at T equals 80 K. The time-evolution of electron density, electron distribution, electron drift velocity, and LO phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n approximately equals 1017 cm-3, the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.

Paper Details

Date Published: 23 April 1998
PDF: 12 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306167
Show Author Affiliations
Eric D. Grann, Arizona State Univ. (United States)
Kong-Thon F. Tsen, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)
Arnel A. Salvador, Univ. of Illinois/Urbana-Champaign (Philippines)
Andrei Botchkarev, Univ. of Illinois/Urbana-Champaign (United States)
Hadis Morkoc, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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