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Proceedings Paper

Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation
Author(s): Ravindra P. Joshi; Kong-Thon F. Tsen; David K. Ferry; Arnel A. Salvador; Andrei Botchkarev; Hadis Morkoc
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Paper Abstract

We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n less than or equal to 1015 cm-3. As the density of photoexcited carriers increased we observed a significant decrease of the average electric field. In particular, for n equals 1018 cm-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.

Paper Details

Date Published: 23 April 1998
PDF: 9 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306166
Show Author Affiliations
Ravindra P. Joshi, Old Dominion Univ. (United States)
Kong-Thon F. Tsen, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)
Arnel A. Salvador, Univ. of Illinois/Urbana-Champaign (Philippines)
Andrei Botchkarev, Univ. of Illinois/Urbana-Champaign (United States)
Hadis Morkoc, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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