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Proceedings Paper

Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: a subpicosecond Raman probe
Author(s): Kong-Thon F. Tsen; David K. Ferry; Jyh-Shyang Wang; Chao-Hsiung Huang; Hao-Hsiung Lin
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Paper Abstract

We have studied transient electron transport in an InP p-i-n nanostructure semiconductor by subpicosecond Raman spectroscopy at T equals 300 K. Both the non-equilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.

Paper Details

Date Published: 23 April 1998
PDF: 10 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306165
Show Author Affiliations
Kong-Thon F. Tsen, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)
Jyh-Shyang Wang, National Taiwan Univ. (Taiwan)
Chao-Hsiung Huang, National Taiwan Univ. (Taiwan)
Hao-Hsiung Lin, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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