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Proceedings Paper

Arsenic-implanted GaAs: an alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications
Author(s): Ci-Ling Pan; Gong-Ru Lin
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Paper Abstract

Arsenic-ion-implanted GaAs (or GaAs:As+), with excess- arsenic-related deep level defects, has recently emerged as a potential alternative to low-temperature molecular-beam- epitaxy (LTMBE) grown GaAs for ultrafast optoelectronic applications. In this paper, we review results of our structural, ultrafast optical and optoelectronic investigations of as-implanted and thermally annealed GaAs:As+. Picosecond photoconductive switching responses are reported for devices fabricated on thermally- annealed low-dose and high-dose implanted GaAs:As+. Novel sign reversals in near-bandgap ultrafast optical responses were observed and explained.

Paper Details

Date Published: 23 April 1998
PDF: 9 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306153
Show Author Affiliations
Ci-Ling Pan, National Chiao Tung Univ. (Taiwan)
Gong-Ru Lin, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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