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Proceedings Paper

Coherent electric-field effects in semiconductors
Author(s): Torsten Meier; K.-C. Je; F. Rossi; Joerg Hader; P. Thomas; Stephan W. Koch
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Paper Abstract

A microscopic many-body theory is presented which allows one to compute the linear and nonlinear optical properties of semiconductor superlattices in the presence of static and time-dependent electric fields applied in the growth direction. For static fields the Bloch-oscillation dynamics, the role of Coulomb effects, carrier relaxation, phonon scattering, and inter- and intraband polarization dephasing is analyzed. The observability of dynamic localization using optical spectroscopy is discussed for alternating applied fields.

Paper Details

Date Published: 23 April 1998
PDF: 8 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306150
Show Author Affiliations
Torsten Meier, Philipps-Univ. Marburg (Germany)
K.-C. Je, Kyung Hee Univ. (South Korea)
F. Rossi, Istituto Nazionale per la Fisica della Materia and Univ. degli Studi di Modena (Italy)
Joerg Hader, Philipps-Univ. Marburg (United States)
P. Thomas, Philipps-Univ. Marburg (Germany)
Stephan W. Koch, Philipps-Univ. Marburg (Germany)

Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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