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Proceedings Paper

Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors
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Paper Abstract

Monte Carlo simulation has been shown to be an effective approach to the study of ultrafast carrier relaxation in semiconductor bulk materials and in microstructures. We review the use of this methodology to study electron-electron and electron-hole interactions, non-equilibrium and confined phonons, and inter-subband relaxation in quantum wells. We also discuss the presence of the collision-duration on the short-time scale, and review the work of some other workers in the field. Finally, we discuss some of the limitations of the Monte Carlo technique.

Paper Details

Date Published: 23 April 1998
PDF: 8 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306149
Show Author Affiliations
David K. Ferry, Arizona State Univ. (United States)
Stephen M. Goodnick, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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