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Proceedings Paper

Picosecond dynamics of low-density excitons in GaAs quantum wells
Author(s): Kai Shum; Robert R. Alfano; Hadis Morkoc
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Paper Abstract

Time-resolved photoluminescence (PL) measurements were performed on a multiple GaAs/AlGaAs quantum well structure. The rise and decay profiles of PL centered at the free exciton line and the impurity related excitonic-complex line were investigated as a function of temperature at a low excitation density (approximately 109 cm-2). This study provides new information on how excitons are captured by impurities and on the kinetics of excitonic-complex formation and annihilation. The exciton capture time by impurities is about 250 ps and independent of temperature (less than 80 K) when the exciton density is comparable to the residual impurity density.

Paper Details

Date Published: 23 April 1998
PDF: 6 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306148
Show Author Affiliations
Kai Shum, CUNY/City College (United States)
Robert R. Alfano, CUNY/City College (United States)
Hadis Morkoc, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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