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Proceedings Paper

Carrier dynamics of anti-Stokes photoluminescence in staggered-band-lineup AlxGa1-xAs/GaInP2 heterostructures
Author(s): Yong-Hoon Cho; Jin-Joo Song; Dongsik Kim; HeeWoong Lim; Byung-Doo Choe
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Paper Abstract

We report anti-Stokes photoluminescence (ASPL) phenomena for AlxGa1-xAs/GaInP2 heterostructures with a staggered (type-II) band lineup. The ASPL properties were investigated by PL, PL excitation, and time-resolved PL spectroscopy. We found that the ASPL could appear in both the GaInP-2) and AlxGa1-xAs layers adjacent to the type- II heterojunction when the excitation photon energy is higher than the interface-related, below-bandgap (BBG) luminescence energy. From the excitation intensity dependent PL measurements, we found that the GaInP2 ASPL intensity exhibits a nearly linear dependence on the excitation intensity. Time-resolved PL measurements were performed for the excitation energy between the bandgaps of GaInP2 and AlxGa1-xAs, as well as above the bandgap of the GaInP2 layer. The GaInP2 ASPL decay time of more than 100 ns was found to follow closely the decay of the BBG luminescence, whereas for excitation above the GaInP2 bandgap, the GaInP2 luminescence decays very rapidly (less than 1 ns). From these results, we propose that the energy up- conversion for the ASPL is via a two-step two-photon absorption process involving localized, long-lived carries near the interface.

Paper Details

Date Published: 23 April 1998
PDF: 8 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306147
Show Author Affiliations
Yong-Hoon Cho, Oklahoma State Univ. (United States)
Jin-Joo Song, Oklahoma State Univ. (United States)
Dongsik Kim, Seoul National Univ. (South Korea)
HeeWoong Lim, Ajou Univ. (South Korea)
Byung-Doo Choe, Seoul National Univ. (South Korea)

Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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