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Proceedings Paper

Ultrafast hole relaxation in III-V semiconductors
Author(s): Natalia Del Fatti; Pierre Langot; Raffaele Tommasi; Fabrice Vallee
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Paper Abstract

Ultrafast relaxation of photoexcited nonequilibrium holes is selectively investigated in bulk GaAs and InP using a high- sensitivity two-color absorption saturation technique. Measurements of the hole characteristic thermalization time as a function of the lattice temperature and of the carrier density and initial average energy show that nonequilibrium hole relaxation is dominated by hole-optical phonon interactions in the range 100 - 300 K. Comparison of the experimental results with a numerical model of carrier dynamics permits the determination of the optical deformation potential in both of these compounds.

Paper Details

Date Published: 23 April 1998
PDF: 12 pages
Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306143
Show Author Affiliations
Natalia Del Fatti, Ecole Polytechnique (France)
Pierre Langot, Ecole Polytechnique (France)
Raffaele Tommasi, Univ. degli Studi di Bari (Italy)
Fabrice Vallee, Ecole Polytechnique (France)


Published in SPIE Proceedings Vol. 3277:
Ultrafast Phenomena in Semiconductors II
Kong-Thon F. Tsen; Harold R. Fetterman, Editor(s)

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