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Proceedings Paper

Optimization of stress in LPCVD polysilicon films for MEMS applications
Author(s): Janak Singh; Ami Chand; Sudhir Chandra
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Paper Abstract

The influence of LPCVD process parameters on stress in polysilicon films has been investigated for surface micromachined structures. The as deposited films show a large strain which can be considerably reduced by post deposition annealing. The polycrystalline film deposited at 605 degree(s)C and 250 mTorr is found to have minimum residual stress. The rapid thermal annealing (RTA) at 1100 degree(s)C for 30 sec relieves the stress completely. Further, the RTA is shown to be a superior process compared to the conventional furnace annealing for obtaining stress free films.

Paper Details

Date Published: 16 April 1998
PDF: 6 pages
Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); doi: 10.1117/12.305590
Show Author Affiliations
Janak Singh, Indian Institute of Technology (India)
Ami Chand, Indian Institute of Technology (India)
Sudhir Chandra, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 3321:
1996 Symposium on Smart Materials, Structures, and MEMS
Vasu K. Aatre; Vijay K. Varadan; Vasundara V. Varadan, Editor(s)

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