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Proceedings Paper

Pressure-assisted fusion bonding of silicon wafers
Author(s): J. S. Deepa Nair; Dinesh Prabhu; Parimi Ramaseshagiri Rao; Amitava DasGupta; S. Karmalkar; Nilanjan Dasgupta; Kunchinadka Narayana Hari Bhat
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Paper Abstract

Silicon-to-silicon bonding with an intermediate oxide layer is an important aspect of the fabrication of microsensors and actuators. In this work, we have developed a novel, two step, pressure-assisted fusion bonding process which has proved to be extremely successful in bonding two silicon wafers. Moreover, as this process does not require a very high degree of surface cleanliness and flatness, it is more suitable for practical applications. In the first step of the process, after making the two wafer surfaces hydrophillic, the wafer pair assembly is slowly heated to 100 - 300 degree(s)C while applying pressure and voltage across them in order to ensure intimate contact. In the second step, the partially bonded wafers are heated to 1050 degree(s)C. The bonds thus formed are extremely strong as shown by fracture strength measurements. The bond strength measured is of the order of 40 kg/cm2. The bonded wafer pair has also been cleaved (without disturbing the bonding) to demonstrate that the bonding is indeed strong enough to withstand further processing.

Paper Details

Date Published: 16 April 1998
PDF: 5 pages
Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); doi: 10.1117/12.305556
Show Author Affiliations
J. S. Deepa Nair, Indian Institute of Technology (India)
Dinesh Prabhu, Indian Institute of Technology (India)
Parimi Ramaseshagiri Rao, Indian Institute of Technology (India)
Amitava DasGupta, Indian Institute of Technology (India)
S. Karmalkar, Indian Institute of Technology (India)
Nilanjan Dasgupta, Indian Institute of Technology (United States)
Kunchinadka Narayana Hari Bhat, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 3321:
1996 Symposium on Smart Materials, Structures, and MEMS
Vasu K. Aatre; Vijay K. Varadan; Vasundara V. Varadan, Editor(s)

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