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Proceedings Paper

Capacitance voltage characteristics of the electrochemical cell for bulk silicon micromachining
Author(s): Ami Chand; Janak Singh; Sudhir Chandra
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Paper Abstract

The C-V measurement for MOS capacitor technique has been adapted to investigate the anisotropic electrochemical etching of silicon for bulk micromachining C-V characteristics of the etching cell have been obtained during the electrochemical etching process. The behavior of the characteristics has been explained on the basis of various layers at the etching interface.

Paper Details

Date Published: 16 April 1998
PDF: 5 pages
Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); doi: 10.1117/12.305555
Show Author Affiliations
Ami Chand, Indian Institute of Technology (India)
Janak Singh, Indian Institute of Technology (India)
Sudhir Chandra, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 3321:
1996 Symposium on Smart Materials, Structures, and MEMS

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