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Proceedings Paper

Anisotropic chemical etching of silicon
Author(s): Shamin Ahmad; Virendra Kr Dwivedi
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Paper Abstract

Potassium hydroxide, water and isopropanol based etchants have been used to etch silicon anisotropically for fabricating microelectromechanical components and structures for various applications. For etching V and U grooves, <100> and <110> orientation silicon wafer are used. Proper orientation of the pattern to be etched is needed to be aligned with reference to the standard flat provided in the commercial wafer. A method has been developed, where proper orientation is experimentally determined on the given wafer for pattern delineation. Very smooth walls and bottom of the trenches have been obtained after controlling the etchant composition, temperature and orientation of the masking pattern. Process details are presented with experimental results.

Paper Details

Date Published: 16 April 1998
PDF: 3 pages
Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); doi: 10.1117/12.305554
Show Author Affiliations
Shamin Ahmad, Central Electronics Engineering Research Institute (India)
Virendra Kr Dwivedi, Central Electronics Engineering Research Institute (India)

Published in SPIE Proceedings Vol. 3321:
1996 Symposium on Smart Materials, Structures, and MEMS
Vasu K. Aatre; Vijay K. Varadan; Vasundara V. Varadan, Editor(s)

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