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Proceedings Paper

Glass to silicon anodic bonding
Author(s): Shamin Ahmad; R. Gopal; M. Mitra; Virendra Kr Dwivedi; Mahesh Kumar
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Paper Abstract

Glass-to-silicon anodic bonding is a well known process for fabricating number of microelectromechanical components and subassemblies. Experiments have been carried out by varying bonding parameters, i.e. temperature and bias voltage, to get strong bond between silicon and 7740 pyrex glass pieces. Bias voltage in the range of 400 - 450 V at 420 degree(s)C appears to be appropriate for quality bonds between silicon and glass.

Paper Details

Date Published: 16 April 1998
PDF: 2 pages
Proc. SPIE 3321, 1996 Symposium on Smart Materials, Structures, and MEMS, (16 April 1998); doi: 10.1117/12.305552
Show Author Affiliations
Shamin Ahmad, Central Electronics Engineering Research Institute (India)
R. Gopal, Central Electronics Engineering Research Institute (India)
M. Mitra, Central Electronics Engineering Research Institute (India)
Virendra Kr Dwivedi, Central Electronics Engineering Research Institute (India)
Mahesh Kumar, Central Electronics Engineering Research Institute (India)


Published in SPIE Proceedings Vol. 3321:
1996 Symposium on Smart Materials, Structures, and MEMS

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