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Proceedings Paper

Progress in GaInNAs/GaAs long-wavelength vertical-cavity surface-emitting lasers
Author(s): Michael C. Larson; Masahiko Kondow; Takeshi Kitatani; Kouji Nakahara; K. Tamura; Yoshiaki Yazawa; Makoto O. Okai; Hiroaki Inoue; Kazuhisa Uomi
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Paper Abstract

GaInNAs is a novel laser diode active layer material which holds great promise for low-cost optical fiber transmission applications requiring emission wavelengths near 1.3 micrometers . GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Continuous-wave room-temperature photo-pumped laser oscillation has been demonstrated in vertical cavity laser designs employing single or multiple GaInNAs quantum wells, with lasing wavelengths as long as 1.256 micrometers . Electrically-injected devices have achieved pulsed operation at room temperature and above, with a minimum threshold current density of 3.1 kA/cm2, slope efficiency above 0.04 W/A, and output power above 5 mW for 45 micrometers -diameter devices. Threshold current has exhibited minimal dependence on temperature from 20 degrees C to 60 degrees C, and laser oscillation is observed for temperatures as high as 95 degrees C.

Paper Details

Date Published: 20 April 1998
PDF: 11 pages
Proc. SPIE 3286, Vertical-Cavity Surface-Emitting Lasers II, (20 April 1998); doi: 10.1117/12.305466
Show Author Affiliations
Michael C. Larson, Hitachi, Ltd. (Japan)
Masahiko Kondow, Hitachi, Ltd. (Japan)
Takeshi Kitatani, Hitachi, Ltd. (Japan)
Kouji Nakahara, Hitachi, Ltd. (Japan)
K. Tamura, Hitachi, Ltd. (Japan)
Yoshiaki Yazawa, Hitachi, Ltd. (Japan)
Makoto O. Okai, Hitachi, Ltd. (Japan)
Hiroaki Inoue, Hitachi, Ltd. (United States)
Kazuhisa Uomi, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 3286:
Vertical-Cavity Surface-Emitting Lasers II
Kent D. Choquette; Robert A. Morgan, Editor(s)

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