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Proceedings Paper

Preparation of light-emitting devices with poly(p-phenylenevinylene): effects of thermal elimination conditions and polymer layer thickness on device performance
Author(s): Chang Seoul; Jai Ick Kang; Souk Il Mah; Changhee Lee
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Paper Abstract

The thermal elimination conditions for more efficient poly(p- phenylene vinylene) polymer light-emitting diodes were established: the precursor films must be heated to 230 degrees Celsius and kept at that temperature for 5 min. under a N2 flow of 50 ml/min. By the heat treatment the degree of conversion to PPV was about 70%. The external quantum efficiency of 0.0078% was achieved for the ITO/70% PPV/Al devices. The brightness of the device was calculated from the efficiency to be 2.3 cd/m2 at 200 MV/m (current density of 0.2 mA/mm2).

Paper Details

Date Published: 17 April 1998
PDF: 9 pages
Proc. SPIE 3281, Polymer Photonic Devices, (17 April 1998); doi: 10.1117/12.305419
Show Author Affiliations
Chang Seoul, Inha Univ. (South Korea)
Jai Ick Kang, Inha Univ. (South Korea)
Souk Il Mah, Inha Univ. (South Korea)
Changhee Lee, Inha Univ. (South Korea)


Published in SPIE Proceedings Vol. 3281:
Polymer Photonic Devices
Bernard Kippelen; Donal D. C. Bradley, Editor(s)

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