Share Email Print
cover

Proceedings Paper

Large-area HgI2 pixel detector experiments
Author(s): Michael M. Schieber; Asaf Zuck; M. Braiman; Leonid Melekhov; J. Nissenbaum; Renato A. D. Turchetta; Wojtek Dulinski; D. Husson; J. L. Riester; S. Sanguinetti; M. Montalti; M. Guzzi
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The direct deposition of polycrystalline semiconductor HgI2 detectors on pre-deposited specially designed pixel electrodes is described, using two methods, the hot wall vapor deposition, HWVD, and thick film screen print (SP) methods. Some characterization results of the HgI2 material used to facilitate the detectors are described. The pre-deposited substrate is made by standard hybrid technology. The electrode pattern is a 16*16 pixel square pattern each with a size of 1.48 mm and with 0.1 mm spacing; the total area covered by the pixels is (25.28 mm)2 equals 639.078 mm2. In order to fan out the pixels to read-out electronics, holes were made through the ceramic thickness and connecting lines were drawn on the opposite side of the ceramic alumina substrate, where complicated patterns can be produced. The pixel detector is tested with beta particles, and data showing the leakage current vs. bias, are given showing a resistivity of about 2*1012 ohm cm. The current and the average charge signal are reported for three different HgI2 pixel detectors. The signal for one of the detectors is about 1100 electrons at 800 V bias voltage and for the second detector, the resistivity is in the same order of magnitude and the charge collection is somewhat better, reaching 1600 electrons at 700 V. One of the detectors was connected to a second hybrid designed for mounting of 8 castor 1.0 chips. CASTOR 1.0 is a VLSI circuit designed for imaging and the results are being evaluated.

Paper Details

Date Published: 1 April 1998
PDF: 8 pages
Proc. SPIE 3301, Solid State Sensor Arrays: Development and Applications II, (1 April 1998); doi: 10.1117/12.304564
Show Author Affiliations
Michael M. Schieber, Sandia National Labs. and Hebrew Univ. of Jerusalem (Israel)
Asaf Zuck, Hebrew Univ. of Jerusalem (Israel)
M. Braiman, Hebrew Univ. of Jerusalem (Israel)
Leonid Melekhov, Hebrew Univ. of Jerusalem (Israel)
J. Nissenbaum, Hebrew Univ. of Jerusalem (Israel)
Renato A. D. Turchetta, Lab. d'Electronique et de Physique des Systemes Instrumentaux (United Kingdom)
Wojtek Dulinski, Lab. d'Electronique et de Physique des Systemes Instrumentaux (France)
D. Husson, Lab. d'Electronique et de Physique des Systemes Instrumentaux (France)
J. L. Riester, Lab. d'Electronique et de Physique des Systemes Instrumentaux (France)
S. Sanguinetti, INFM (Italy) and Univ. degli Studi di Milano (Italy)
M. Montalti, INFM (Italy) and Univ. degli Studi di Milano (Italy)
M. Guzzi, INFM (Italy) and Univ. degli Studi di Milano (Italy)


Published in SPIE Proceedings Vol. 3301:
Solid State Sensor Arrays: Development and Applications II
Morley M. Blouke, Editor(s)

© SPIE. Terms of Use
Back to Top