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Proceedings Paper

Breakdown mechanisms in Al(GaN) MSM photodetectors
Author(s): Ian T. Ferguson; Matthew J. Schurman; Robert F. Karlicek Jr.; Zhe Chuan Feng; S. Lianga; Yicheng Lu; Charles L. Joseph
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Paper Abstract

AlGaN based interdigital metal-semiconductor-metal (MSM) photodetectors with 14 percent Al have been successfully grown and fabricate don sapphire substrates. The devices exhibit large gains up to 106 at high bias voltages, but with very high dark currents, > 1 mA and very long detector responses, > 60 seconds. A negative temperature coefficient for the breakdown voltage was observed indicating that tunneling is occurring. However, at high bias voltages, avalanche breakdown also appears to be present since a constant breakdown field of 105 V/cm was obtained independent of MSM geometry. Avalanche breakdown is nucleated at the non-uniform field distribution at the edge of the MSM finger.

Paper Details

Date Published: 8 April 1998
PDF: 6 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304503
Show Author Affiliations
Ian T. Ferguson, EMCORE Corp. (United States)
Matthew J. Schurman, EMCORE Corp. (United States)
Robert F. Karlicek Jr., EMCORE Corp. (United States)
Zhe Chuan Feng, EMCORE Corp. (Singapore)
S. Lianga, Rutgers Univ. (United States)
Yicheng Lu, Rutgers Univ. (United States)
Charles L. Joseph, Rutgers Univ. (United States)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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