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Proceedings Paper

RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition
Author(s): Yoshiyuki Hirano; Fumio Sato; Ahalapitiya Hewage Jayatissa; Hiroshi Ohtake; Kuniharu Takizawa
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Paper Abstract

The effects of rf-bias to the substrate on the defects of hydrogenated amorphous silicon deposited by electron cyclotron resonance - plasma enhanced chemical vapor deposition were investigate.d Measurements by constant photo-current method showed that the defect density decreased as the rf-power increased. The decrease of the defect density by rf-bias did not depend on the microwave power so much. Deposition rate did not depend on the rf- power, whereas it increased with the increase of the microwave power. Photoconductivity was shown to increase with rf-power corresponding to the decrease of the defect density. Surface roughness measurements indicated that the surface flatness was increased by rf-bias voltage independently of the deposition temperature. It was considered that these elimination of defects was induced by the increase of the number of mobile particles on the surface due to rf-bias.

Paper Details

Date Published: 8 April 1998
PDF: 8 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304500
Show Author Affiliations
Yoshiyuki Hirano, NHK Science and Technical Research Labs. (Japan)
Fumio Sato, NHK Science and Technical Research Labs. (Japan)
Ahalapitiya Hewage Jayatissa, NHK Science and Technical Research Labs. (Japan)
Hiroshi Ohtake, NHK Science and Technical Research Labs. (Japan)
Kuniharu Takizawa, NHK Science and Technical Research Labs. (Japan)


Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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