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Proceedings Paper

RF magnetron sputtering deposition of CdTe passivation on HgCdTe
Author(s): Jaroslaw Rutkowski; Krzysztof Adamiec; Antoni Rogalski
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Paper Abstract

In this study, we report the RF magnetron sputtering growth and characterization of CdTe passivant on bulk n-type HgCdTe. Our investigations include the HgCdTe surface preparation and in-situ pretreatment, deposition-induced surface damage, interface charge, CdTe film stoichiometry, and thermal stability. The metal-insulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage characteristics. The heterostructures are also characterized by reflectance measurement. In order to investigate the passivation properties of CdTe/HgCdTe heterostructures, we have modeled the band diagram of abrupt CdTe/HgCdTe heterojunction. The effect of sputtering growth condition parameters is also reported. The sputtering CdTe layers, exhibit excellent dielectric, insulating and mechano- chemical properties, as well as interface properties. The interfaces are characterized by slight accumulation and a small hysteresis. A carefully controlled growth process and surface pretreatment tailored to the specific material are required in order to obtain near flat band conditions on n- type materials. Additional informations on surface limitations are obtained from analyzing the I-V characteristics of photodiodes with metal gates covering the p-n junction surface location.

Paper Details

Date Published: 8 April 1998
PDF: 9 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304498
Show Author Affiliations
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
Krzysztof Adamiec, Military Univ. of Technology (Poland)
Antoni Rogalski, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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