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Proceedings Paper

Electrical transport properties of highly doped N-type GaN epilayers
Author(s): Hyung Jae Lee; M. G. Cheong; Eun-Kyung Suh; Manijeh Razeghi
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Paper Abstract

Temperature-dependent Hall-effects in MOCVD-grown Si-doped GaN epilayers were measured as a function of temperature in the range 10-800 K. The results were satisfactorily analyzed in terms of a two-band model including the (Gamma) and impurity bands at lower temperatures than room. The (Gamma) band electrons are dominant only high temperatures. The ionized impurity scattering is the most important in the (Gamma) band except at very high temperatures.

Paper Details

Date Published: 8 April 1998
PDF: 6 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304496
Show Author Affiliations
Hyung Jae Lee, Chonbuk National Univ. (South Korea)
M. G. Cheong, Chonbuk National Univ. (South Korea)
Eun-Kyung Suh, Chonbuk National Univ. (South Korea)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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